US Patent Application 17826100. MEMORY CELL ISOLATION simplified abstract

MEMORY CELL ISOLATION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Tzu-Yu Chen of Kaohsiung City (TW)]]

[[Category:Sheng-Hung Shih of Hsinchu (TW)]]

[[Category:Fu-Chen Chang of New Taipei City (TW)]]

[[Category:Kuo-Chi Tu of Hsinchu (TW)]]

MEMORY CELL ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826100 titled 'MEMORY CELL ISOLATION

Simplified Explanation

The abstract describes a semiconductor device that includes a memory cell on a semiconductor substrate. The memory cell consists of a bottom contact, a memory material, a top contact, and electrical isolation structures.

• The semiconductor device is a memory cell on a semiconductor substrate.
• The memory cell includes a bottom contact, a memory material, and a top contact.
• The top contact is laterally surrounded by a first electrical isolation structure.
• The memory material and the bottom contact are laterally surrounded by a second electrical isolation structure.

Original Abstract Submitted

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a memory cell on the semiconductor substrate, where the memory cell includes a bottom contact, a memory material on the bottom contact, a top contact on the memory material, a first electrical isolation structure laterally surrounding the top contact, and a second electrical isolation structure laterally surrounding the memory material and the bottom contact.