US Patent Application 17825698. SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING simplified abstract
Contents
SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Chih-Yu Lu of Hsinchu County (TW)]]
[[Category:Chih-Yu Lai of Hsinchu County (TW)]]
[[Category:Meng-Hsueh Wang of Hsinchu County (TW)]]
[[Category:Chih-Liang Chen of Hsinchu County (TW)]]
[[Category:Shang Hsuan Chiu of Hsinchu County (TW)]]
SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825698 titled 'SEMICONDUCTOR DEVICES WITH REDUCED EFFECT OF CAPACITIVE COUPLING
Simplified Explanation
The patent application describes a semiconductor device that includes multiple source/drain structures for transistors.
- The device has a first source/drain structure and a second source/drain structure for a first transistor.
- It also has a third source/drain structure and a fourth source/drain structure for a second transistor.
- The second source/drain structure and the third source/drain structure merge to form a common source/drain structure.
- The device includes a first interconnect structure that extends in a specific direction and is positioned above the common source/drain structure.
- A first dielectric structure is placed between the first interconnect structure and the common source/drain structure.
Original Abstract Submitted
A semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a third source/drain structure and a fourth source/drain structure of a second transistor. The second source/drain structure and the third source/drain structure merges as a common source/drain structure. The semiconductor device includes a first interconnect structure extending along a first lateral direction and disposed above the common source/drain structure. The semiconductor device includes a first dielectric structure interposed between the first interconnect structure and the common source/drain structure.