US Patent Application 17825516. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shuen-Shin Liang of Hsinchu (TW)]]

[[Category:Min-Chiang Chuang of Hsinchu (TW)]]

[[Category:Chia-Cheng Chen of Hsinchu (TW)]]

[[Category:Chun-Hung Wu of Hsinchu (TW)]]

[[Category:Liang-Yin Chen of Hsinchu (TW)]]

[[Category:Sung-Li Wang of Hsinchu (TW)]]

[[Category:Pinyen Lin of Hsinchu (TW)]]

[[Category:Kuan-Kan Hu of Hsinchu (TW)]]

[[Category:Jhih-Rong Huang of Hsinchu (TW)]]

[[Category:Szu-Hsian Lee of Hsinchu (TW)]]

[[Category:Tsun-Jen Chan of Hsinchu (TW)]]

[[Category:Cheng-Wei Lian of Hsinchu (TW)]]

[[Category:Po-Chin Chang of Hsinchu (TW)]]

[[Category:Chuan-Hui Shen of Hsinchu (TW)]]

[[Category:Lin-Yu Huang of Hsinchu (TW)]]

[[Category:Yuting Cheng of Hsinchu (TW)]]

[[Category:Yan-Ming Tsai of Hsinchu (TW)]]

[[Category:Hong-Mao Lee of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17825516 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

- The patent application describes a semiconductor device that includes a source/drain portion, a metal silicide layer, and a transition layer. - The transition layer is located between the source/drain portion and the metal silicide layer. - The transition layer contains implantation elements, which are atoms or ions that have been implanted into the layer. - The atomic concentration of the implantation elements in the transition layer is higher than in the source/drain portion and the metal silicide layer. - This higher concentration of implantation elements in the transition layer helps to reduce the contact resistance between the source/drain portion and the metal silicide layer. - The patent application also includes methods for manufacturing the semiconductor device with the described features.

Original Abstract Submitted

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.