US Patent Application 17825440. METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE simplified abstract

METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Wei-Chih Wen of Hsinchu (TW)]]

[[Category:Yu-Wei Jiang of Hsinchu (TW)]]

[[Category:Han-Jong Chia of Hsinchu (TW)]]

METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17825440 titled 'METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a method of forming a semiconductor memory device.

• The method involves forming a stack structure on a substrate, consisting of multiple dielectric layers and sacrificial layers stacked alternately in a vertical direction.
• Source/drain trenches are then created in the stack structure.
• A barrier layer is conformally formed in the trenches, followed by filling them with sacrificial segments.
• A protection layer is formed over the stack structure, covering the barrier layer and sacrificial segments.
• The sacrificial layers of the stack structure are removed, creating spaces between the dielectric layers.
• Conductive layers are formed in these spaces.
• The protection layer, sacrificial segments, and barrier layer are sequentially removed.
• Memory structures are then formed in the source/drain trenches.

Overall, this method simplifies the process of forming a semiconductor memory device by utilizing sacrificial layers and segments, allowing for the creation of memory structures in a more efficient manner.

Original Abstract Submitted

A method of forming a semiconductor memory device includes: forming a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of sacrificial layers alternatingly stacked in a Z direction substantially perpendicular to the substrate; forming a plurality of source/drain trenches in the stack structure; conformally forming a barrier layer in the source/drain trenches, and then filling the source/drain trenches with a plurality of sacrificial segments; forming a protection layer over the stack structure to cover the barrier layer and the sacrificial segments; removing the sacrificial layers of the stack structure to form a plurality of spaces among the dielectric layers; forming a plurality of conductive layers in the spaces; sequentially removing the protection layer, the sacrificial segments and the barrier layer; and forming a plurality of memory structures in the source/drain trenches.