US Patent Application 17825411. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shin-Yi Yang of Hsinchu (TW)]]

[[Category:Meng-Pei Lu of Hsinchu (TW)]]

[[Category:Han-Tang Hung of Hsinchu (TW)]]

[[Category:Ching-Fu Yeh of Hsinchu (TW)]]

[[Category:Ming-Han Lee of Hsinchu (TW)]]

[[Category:Shau-Lin Shue of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17825411 titled 'SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes various components such as a substrate, channel layers, epitaxial structures, a conductive structure, a via, and a graphene barrier.

• The device consists of a substrate, which serves as the foundation for the other components.
• Multiple channel layers and epitaxial structures are placed on top of the substrate, with the channel layers connecting the epitaxial structures.
• A conductive structure is positioned on the opposite side of the substrate compared to the epitaxial structures.
• A via is established to connect one of the epitaxial structures with the conductive structure.
• The via is surrounded by a graphene barrier, which acts as a protective layer.

Overall, this patent application presents a semiconductor device design that incorporates various elements to enhance its functionality and protection.

Original Abstract Submitted

A semiconductor device includes a substrate, a plurality of channel layers, two epitaxial structures, a conductive structure, a via, and a graphene barrier. The channel layers and the epitaxial structures are disposed over the substrate. The channel layers are connected between the epitaxial structures. The conductive structure is disposed on the substrate opposite to the epitaxial structures. The via is connected between one of the epitaxial structure and the conductive structure. The graphene barrier surrounds the via.