US Patent Application 17824725. SELECTIVE SINGLE-LEVEL MEMORY CELL OPERATION simplified abstract

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SELECTIVE SINGLE-LEVEL MEMORY CELL OPERATION

Organization Name

Micron Technology, Inc.

Inventor(s)

Donghua Zhou of Suzhou City (CN)

SELECTIVE SINGLE-LEVEL MEMORY CELL OPERATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824725 titled 'SELECTIVE SINGLE-LEVEL MEMORY CELL OPERATION

Simplified Explanation

The patent application describes a method for configuring non-volatile memory blocks to improve memory operation performance. Here are the key points:

  • The method selectively configures a subset of non-volatile memory blocks to operate in a single-level mode.
  • The first subset of memory blocks is then collectively configured to function as a pseudo single-level cache.
  • Data associated with memory operation performance is written to the first subset of memory blocks.
  • The data is later migrated from the first subset of memory blocks to a second subset of memory blocks.


Original Abstract Submitted

A method includes selectively configuring a first subset of non-volatile memory blocks to operate in a single-level mode, configuring the first subset of non-volatile memory blocks to collectively operate as a pseudo single-level cache, writing data associated with performance of a memory operation to the first subset of non-volatile memory blocks, and migrating the data from the first subset of non-volatile memory blocks to a second subset of non-volatile memory blocks.