US Patent Application 17824481. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE simplified abstract

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METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

CHIH-HSUAN Yeh of TAOYUAN CITY (TW)

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824481 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE

Simplified Explanation

The present disclosure describes a method for fabricating a semiconductor device using a photomask and a stack structure.

  • The method involves providing a photomask that has an opaque layer and a translucent layer on a mask substrate.
  • The translucent layer has a mask opening that exposes a portion of the mask substrate.
  • A stack structure is then provided, which includes an etch stop layer, a bottom conductive layer, and a first inter-dielectric layer.
  • A pre-process mask layer is formed on the stack structure.
  • The pre-process mask layer is patterned using the photomask to create a patterned mask layer.
  • The patterned mask layer includes a mask region corresponding to the opaque layer, a region of body portion corresponding to the translucent layer, and a hole of contact portion corresponding to the mask opening of contact portion.


Original Abstract Submitted

The present disclosure provides a method for fabricating a semiconductor device including providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate, wherein the translucent layer includes a mask opening of contact portion which exposes a portion of the mask substrate; providing a stack structure including an etch stop layer on a bottom conductive layer and a first inter-dielectric layer on the etch stop layer, and forming a pre-process mask layer on the stack structure; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the opaque layer, a region of body portion corresponding to the translucent layer, and a hole of contact portion corresponding to the mask opening of contact portion.

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