US Patent Application 17824436. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Tsung-Chieh Hsiao of Shetou Township (TW)]]

[[Category:Hsiang-Ku Shen of Hsinchu City (TW)]]

[[Category:Yuan-Yang Hsiao of Taipei (TW)]]

[[Category:Wen-Chiung Tu of New Taipei City (TW)]]

[[Category:Chen-Chiu Huang of Taichung City (TW)]]

[[Category:Dian-Hau Chen of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824436 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device.

• The method involves forming multiple layers of conductive and insulating materials.
• A first conductive layer is formed over a first insulating layer.
• A first dielectric layer is formed over the first conductive layer.
• A second conductive layer is formed over a portion of the first dielectric layer.
• A second dielectric layer is formed over the second conductive layer.
• A third conductive layer is formed over the second dielectric layer and another portion of the first dielectric layer.
• A third dielectric layer is formed over the third conductive layer.
• A first conductive contact is formed, connecting to the first conductive layer.
• A second conductive contact is formed, connecting to the third conductive layer.
• The second conductive layer is an electrically floating layer, meaning it is not connected to any other component.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a first conductive layer over a first insulating layer and forming a first dielectric layer over the first conductive layer. A second conductive layer is formed over a first portion of the first dielectric layer. A second dielectric layer is formed over the second conductive layer. A third conductive layer is formed over the second dielectric layer and the second portion of the first dielectric layer. A third dielectric layer is formed over the third conductive layer. A first conductive contact is formed contacting the first conductive layer. A second conductive contact is formed contacting the third conductive layer. The second conductive layer is an electrically floating layer.