US Patent Application 17824329. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Lin-Yu Huang of Hsinchu (TW)]]
[[Category:Li-Zhen Yu of New Taipei City (TW)]]
[[Category:Huan-Chieh Su of Tianzhong Township (TW)]]
[[Category:Chih-Hao Wang of Baoshan Township (TW)]]
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824329 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes semiconductor structures and methods for manufacturing them.
- The semiconductor structure includes nanostructures surrounded by a gate structure and a source/drain structure adjacent to the gate structure.
- A contact structure is formed over each side of the source/drain structure.
- The contact structure has two portions made of different materials.
- The width of the source/drain structure is smaller than the width of the second portion of the contact structure.
Original Abstract Submitted
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures surrounded by a first gate structure, and a first source/drain (S/D) structure adjacent to the first gate structure. The semiconductor structure includes a first contact structure formed over a first side of the first S/D structure, and a second contact structure formed over a second side of the first S/D structure. The second contact structure includes a first portion and a second portion. The first portion and the second portion are made of different materials. The first S/D structure has a first width. The second portion has a second width. The first width is smaller than the second width.
