US Patent Application 17824263. METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih-Hsin Yang of Zhubei City (TW)]]

[[Category:Dian-Hau Chen of Hsinchu (TW)]]

[[Category:Yen-Ming Chen of Chu-Pei City (TW)]]

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824263 titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a method for forming a semiconductor structure.

• The method involves creating an interconnect structure and a conductive feature that is connected to the interconnect structure.
• A passivation layer is then formed over the interconnect structure and conductive feature.
• The passivation layer is etched to create an opening that exposes the conductive feature.
• An electrical test is performed on the conductive feature.
• The opening is filled with an oxide material.
• A carrier substrate is attached over the oxide material using a bonding layer.

Original Abstract Submitted

A method for forming a semiconductor structure is provided. The method includes forming an interconnect structure, and forming a conductive feature electrically connected to the interconnect structure. The method also includes forming a first passivation layer over the interconnect structure and the conductive feature, and etching the first passivation layer to form an opening that exposes the conductive feature. The method further includes performing an electrical test on the conductive feature, filling the opening with an oxide material, and attaching a carrier substrate over the oxide material using a bonding layer.