US Patent Application 17823063. SEMICONDUCTOR PACKAGE DEVICE AND SEMICONDUCTOR WIRING SUBSTRATE THEREOF simplified abstract

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SEMICONDUCTOR PACKAGE DEVICE AND SEMICONDUCTOR WIRING SUBSTRATE THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Sheng-Fan Yang of HSINCHU CITY (TW)]]

[[Category:Wei-Chiao Wang of HSINCHU CITY (TW)]]

[[Category:Yi-Tzeng Lin of HSINCHU CITY (TW)]]

SEMICONDUCTOR PACKAGE DEVICE AND SEMICONDUCTOR WIRING SUBSTRATE THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17823063 titled 'SEMICONDUCTOR PACKAGE DEVICE AND SEMICONDUCTOR WIRING SUBSTRATE THEREOF

Simplified Explanation

The patent application describes a semiconductor wiring substrate with multiple circuit layers and a dielectric layer.

  • The substrate has a first circuit layer with signal and ground traces arranged alternately, with a specific spacing between them.
  • A first dielectric layer is placed between the first circuit layer and a second circuit layer.
  • The first dielectric layer has a specific thickness in the direction of the arrangement of the circuit layers.
  • The spacing between the signal and ground traces is within a specific range relative to the thickness of the dielectric layer.


Original Abstract Submitted

A semiconductor wiring substrate includes a first circuit layer, a second circuit layer and a first dielectric layer. The first circuit layer includes a plurality of first signal traces and a plurality of first ground traces, wherein the first signal traces and the first ground traces are alternatively arranged on the first circuit layer, and one of the first signal traces is spaced at a first spacing from adjacent one of the first ground traces. The first dielectric layer is between the first circuit layer and the second circuit layer and has a first thickness in an arrangement direction of the first circuit layer, the first dielectric layer and the second circuit layer, wherein the first spacing substantially ranges from 0.78 to 1.96 times the first thickness.

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