US Patent Application 17816130. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

YOUMING Liu of Hefei City (CN)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17816130 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The present disclosure is about a semiconductor structure and its manufacturing method in the field of semiconductors.

• The manufacturing method involves several steps:

 * A first insulating layer is formed on a substrate.
 * Active pillars are arranged in the first insulating layer at regular intervals along two directions.
 * The first insulating layer is partially removed to create first trenches, exposing the substrate between adjacent active pillars.
 * An isolation layer is formed in each first trench.
 * Some of the first insulating layer between adjacent isolation layers is removed, creating a first filling space that exposes the middle region of the active pillar.
 * A gate structure is formed on the exposed peripheral surface of the active pillar, with the gate structures integrated along one direction.

The patent application aims to simplify the manufacturing process of semiconductor structures and improve their performance.

Original Abstract Submitted

The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The manufacturing method includes: forming a first insulating layer on a substrate, a plurality of active pillars are arranged at intervals along a first direction and a second direction in the first insulating layer; partially removing the first insulating layer, to form a plurality of first trenches, each first trench exposes the substrate, and is located between two adjacent columns of active pillars; forming an isolation layer in each first trench; removing at least a part of the first insulating layer between adjacent isolation layers, to form a first filling space, the first filling space exposes a peripheral surface of a middle region of the active pillar; and forming a gate structure on the exposed peripheral surface of the active pillar, the gate structures are integrated along the second direction.