US Patent Application 17804751. GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chi-Ming Chen of Zhubei City (TW)]]

[[Category:Kuei-Ming Chen of New Taipei City (TW)]]

[[Category:Yung-Chang Chang of Taipei City (TW)]]

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804751 titled 'GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application discusses a method for improving the electrical performance of a gallium nitride drain in a transistor by depositing gallium nitride and carbon composite layers, and by implanting silicon in an aluminum nitride liner.

• The method involves depositing gallium nitride and carbon composite layers on the gallium nitride drain of a transistor.
• This creates a buffer between the gallium nitride drain and the silicon substrate, reducing gaps and defects caused by lattice mismatch.
• The reduction in gaps and defects improves the electrical performance of the drain.
• The method also reduces current leakage into the substrate, further improving the electrical performance of the drain.
• Additionally, silicon is implanted in an aluminum nitride liner for the gallium nitride drain.
• This reduces contact resistance at the interface between the gallium nitride and the silicon.
• The reduction in contact resistance improves the electrical performance of the transistor.

Original Abstract Submitted

Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.