US Patent Application 17804146. METAL GATE PROCESS AND RELATED STRUCTURE simplified abstract

METAL GATE PROCESS AND RELATED STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih-Lun Lu of New Taipei City (TW)]]

[[Category:Jih-Sheng Yang of Hsinchu City (TW)]]

[[Category:Chen-Wei Pan of Hsinchu County (TW)]]

[[Category:Chih-Teng Liao of Hsinchu City (TW)]]

METAL GATE PROCESS AND RELATED STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804146 titled 'METAL GATE PROCESS AND RELATED STRUCTURE

Simplified Explanation

- The patent application describes a method of forming a semiconductor device. - The method involves providing a device with a gate stack that includes a metal gate layer and a spacer layer on the sidewall. - An etch-back process is performed on the metal gate layer to create an opening over the gate stack. - A plasma treatment process is then performed to modify the profile of the opening. - A HM (high mobility) layer is formed over the metal gate layer and within the modified profile of the opening.

Original Abstract Submitted

A method of forming a semiconductor device includes providing a device having a gate stack with a metal gate layer and a spacer layer disposed on a sidewall of the gate stack. In some embodiments, the method further includes performing an etch-back process to the metal gate layer to form an opening over the gate stack. In various examples, the method further includes performing a plasma treatment process to modify a profile of the opening. In some cases, the method further includes forming a HM layer over the metal gate layer and within the opening having the modified profile.