US Patent Application 17804125. SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF simplified abstract

SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Wen-Shun Lo of Hsinchu County (TW)]]

[[Category:Yu-Chi Chang of Kaohsiung City (TW)]]

[[Category:Yingkit Felix Tsui of Cupertino CA (US)]]

SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804125 titled 'SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF

Simplified Explanation

The patent application describes a semiconductor device that includes different regions and layers to improve its performance. Here are the key points:

• The device has a substrate with a P-well region, which is a region with a positive charge.
• On either side of the P-well region, there are N-well regions, which have a negative charge.
• Beneath the P-well region and part of the N-well regions, there is a deep N-well region.
• The device also has a first conductive layer that is formed over a specific area of the P-well region called the cathode region.
• At the junction of the first conductive layer and the P-well region, a Schottky barrier is formed. This barrier helps control the flow of electric current.
• Additionally, there is a second conductive layer formed over the anode regions of the P-well region.
• The anode regions are located on either side of the cathode region.

Overall, this semiconductor device design aims to optimize the performance and functionality of the device by utilizing different regions and conductive layers.

Original Abstract Submitted

A semiconductor device includes a substrate having a P-well region, an N-well region disposed on either side of and abutting the P-well region, and a deep N-well region disposed beneath and abutting both the P-well region and at least part of the N-well region on either side of the P-well region. The semiconductor device further includes a first conductive layer formed over a cathode region of the P-well region, where a Schottky barrier is formed at a junction of the first conductive layer and the P-well region. The semiconductor device further includes a second conductive layer formed over anode regions of the P-well region, where the anode regions are disposed on either side of the cathode region.