US Patent Application 17804095. MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Wei-Chih Wang of Taoyuan City (TW)
MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17804095 titled 'MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a memory structure that includes various layers and a contact. The contact has three portions that extend into different layers. The bottom surface of the first contact portion is lower than the top surface of the source/drain region. The second contact portion is located between the first and third contact portions. The distance between the sidewalls of the first contact portion and the source/drain region is a specific percentage of the width of the source/drain region.
- Memory structure with a unique contact design
- Contact has three portions extending into different layers
- First contact portion is lower than the source/drain region
- Second contact portion is between the first and third contact portions
- Specific distance between sidewalls of the first contact portion and the source/drain region
Original Abstract Submitted
A memory structure of the present disclosure includes a source/drain region on a substrate, a first dielectric layer covering the source/drain region, a second dielectric layer on the first dielectric layer, and a contact contacting the source/drain region. The contact includes a first contact portion extending into the source/drain region, a second contact portion extending into the first dielectric layer, and a third contact portion extending into the second dielectric layer. A bottom surface of the first contact portion is lower than a top surface of the source/drain region. The second contact portion is between the first contact portion and the third contact portion. A distance between a sidewall of the first contact portion and a sidewall of the source/drain region is 30% to 60% of a width of the source/drain region.