US Patent Application 17804095. MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

Wei-Chih Wang of Taoyuan City (TW)

MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17804095 titled 'MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a memory structure that includes various layers and a contact. The contact has three portions that extend into different layers. The bottom surface of the first contact portion is lower than the top surface of the source/drain region. The second contact portion is located between the first and third contact portions. The distance between the sidewalls of the first contact portion and the source/drain region is a specific percentage of the width of the source/drain region.

  • Memory structure with a unique contact design
  • Contact has three portions extending into different layers
  • First contact portion is lower than the source/drain region
  • Second contact portion is between the first and third contact portions
  • Specific distance between sidewalls of the first contact portion and the source/drain region


Original Abstract Submitted

A memory structure of the present disclosure includes a source/drain region on a substrate, a first dielectric layer covering the source/drain region, a second dielectric layer on the first dielectric layer, and a contact contacting the source/drain region. The contact includes a first contact portion extending into the source/drain region, a second contact portion extending into the first dielectric layer, and a third contact portion extending into the second dielectric layer. A bottom surface of the first contact portion is lower than a top surface of the source/drain region. The second contact portion is between the first contact portion and the third contact portion. A distance between a sidewall of the first contact portion and a sidewall of the source/drain region is 30% to 60% of a width of the source/drain region.

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