US Patent Application 17752976. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

You-Ru Lin of New Taipei (TW)

Sheng Kai Yeh of Taichung (TW)

Jen-Yuan Chang of Hsinchu (TW)

Chi-Yuan Shih of Zhubei (TW)

Chia-Ming Hung of Taipei (TW)

Hsiang-Fu Chen of Zhubei (TW)

Shih-Fen Huang of Jhubei (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752976 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Simplified Explanation

The patent application describes a semiconductor device and a method for creating such a device.

  • The device includes a MEMS component with one or more MEMS pixels, a MEMS membrane substrate, and a MEMS sidewall.
  • An analog circuit component is bonded to the MEMS component and includes at least one analog CMOS component within an analog circuit insulative layer and an analog circuit component substrate.
  • An HPC component is bonded to the analog circuit component substrate and includes at least one HPC metal component within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the bond pad and the HPC metal component, and an HPC substrate.
  • A DTC component is bonded to the HPC substrate and includes a DTC die within a DTC substrate.


Original Abstract Submitted

A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.

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