US Patent Application 17752662. MEMORY DEVICE WITH REDUCED AREA simplified abstract

MEMORY DEVICE WITH REDUCED AREA

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chun-Ying Lee of Hsinchu City (TW)]]

[[Category:Chia-En Huang of Xinfeng Township (TW)]]

[[Category:Chieh Lee of Hsinchu City (TW)]]

MEMORY DEVICE WITH REDUCED AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752662 titled 'MEMORY DEVICE WITH REDUCED AREA

Simplified Explanation

The patent application is for a memory device that has multiple word lines (WLs).

• The memory device includes several drivers, each controlling a specific WL.
• Each driver consists of two transistors, one with a first conductive type and the other with a second conductive type.
• The first transistor of the first driver is located in a first well of the substrate.
• The second transistor of the first driver is located in a second well of the substrate.
• The first well and the second well are separated from each other.

Original Abstract Submitted

A memory device includes a plurality of word lines (WLs). The memory device includes a plurality of drivers that are each configured to control a corresponding one of the plurality of WLs and each comprise a first transistor having a first conductive type and a second transistor having a second conductive type. The first transistor of a first one of the drivers is formed in a first well of a substrate, and the second transistor of the first driver is formed in a second well of the substrate. The first well is spaced apart from the second well.