US Patent Application 17752638. METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS simplified abstract
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Contents
METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS
Organization Name
Inventor(s)
KAI-HUNG Lin of TAOYUAN CITY (TW)
JYUN-HUA Yang of TAIPEI CITY (TW)
METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17752638 titled 'METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS
Simplified Explanation
The patent application describes a method for creating a storage capacitor.
- Lower electrode is formed.
- A first dielectric layer is deposited to cover the lower electrode.
- A second dielectric layer is deposited on top of the first dielectric layer.
- A third dielectric layer is deposited on top of the second dielectric layer.
- An upper electrode is formed on top of the third dielectric layer.
Original Abstract Submitted
The present application provides a method of fabricating a storage capacitor. The method includes steps of forming a lower electrode; depositing a first dielectric layer covering the lower electrode; depositing a second dielectric layer on the first dielectric layer; depositing a third dielectric layer on the second dielectric layer; and forming an upper electrode on the third dielectric layer.
