US Patent Application 17752558. TRANSDUCER DEVICE AND METHOD OF MANUFACTURE simplified abstract
Contents
TRANSDUCER DEVICE AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
TRANSDUCER DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17752558 titled 'TRANSDUCER DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The patent application describes a method of creating a transducer, which is a device that converts one form of energy into another.
- The method involves depositing a layer of dielectric material on an electrode.
- The dielectric layer is then patterned to create protrusions of different sizes.
- The larger protrusions are called first protrusions, while the smaller ones are called second protrusions.
- The dielectric layer is then bonded to a second electrode using another layer of dielectric material.
- The sidewalls of the second dielectric layer create a cavity between the two electrodes.
- The first protrusions are located within this cavity.
- The purpose of this method is to create a transducer with specific features and characteristics.
Original Abstract Submitted
A method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form first protrusions and second protrusions, where a first diameter of each of the first protrusions is larger than a second diameter of each of the second protrusions; and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the first protrusions are disposed in the cavity.
