US Patent Application 17737340. LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION simplified abstract
Contents
LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION
Organization Name
Inventor(s)
Supriya Ghosh of San Jose CA (US)
Susmit Singha Roy of Sunnyvale CA (US)
Abhijit Basu Mallick of Fremont CA (US)
LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17737340 titled 'LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION
Simplified Explanation
- The patent application describes methods of semiconductor processing using a silicon-containing precursor. - A substrate is placed in a semiconductor processing chamber and has features on its surface. - A silicon-containing material is deposited on the substrate, extending into the features. - An oxygen-containing precursor is introduced. - The silicon-containing material is annealed with the oxygen-containing precursor, causing it to expand within the features. - The process can be repeated to fill the features on the substrate.
Original Abstract Submitted
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.
