US Patent Application 17737328. SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS simplified abstract

SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS

Organization Name

Applied Materials, Inc.

Inventor(s)

Zeqing Shen of San Jose CA (US)

Susmit Singha Roy of Sunnyvale CA (US)

Abhijit Basu Mallick of Fremont CA (US)

SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17737328 titled 'SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS

Simplified Explanation

- The patent application describes a method for semiconductor processing using silicon and carbon precursors. - The carbon-containing precursor used in the method has a carbon-carbon double bond or a carbon-carbon triple bond. - A substrate is placed in a semiconductor processing chamber. - An oxygen-containing precursor is introduced into the chamber. - The silicon-containing precursor, carbon-containing precursor, and oxygen-containing precursor are thermally reacted at a temperature below 700°C. - This reaction results in the formation of a silicon-and-carbon-containing layer on the substrate.

Original Abstract Submitted

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the oxygen-containing precursor at a temperature less than or about 700° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.