US Patent Application 17737311. LOW TEMPERATURE CARBON GAPFILL simplified abstract
Contents
LOW TEMPERATURE CARBON GAPFILL
Organization Name
Inventor(s)
Supriya Ghosh of San Jose CA (US)
Susmit Singha Roy of Sunnyvale CA (US)
Abhijit Basu Mallick of Fremont CA (US)
Shuchi Sunil Ojha of Sunnyvale CA (US)
Praket Prakash Jha of San Jose CA (US)
LOW TEMPERATURE CARBON GAPFILL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17737311 titled 'LOW TEMPERATURE CARBON GAPFILL
Simplified Explanation
The patent application describes a method for semiconductor processing using a carbon-containing precursor.
- The method involves introducing a carbon-containing precursor into a semiconductor processing chamber.
- A substrate is placed in the chamber, which has features on its surface.
- A plasma of the carbon-containing precursor is formed in the chamber.
- The carbon-containing material is deposited on the substrate, extending into the features.
- A plasma of a hydrogen-containing precursor is then formed in the chamber.
- The carbon-containing material is treated with the plasma effluents of the hydrogen-containing precursor.
- This treatment causes some of the carbon-containing material to be removed from the substrate.
Original Abstract Submitted
Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.
