US Patent Application 17736843. DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES simplified abstract
Contents
DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES
Organization Name
Inventor(s)
Michel Khoury of Mountain View CA (US)
Archana Kumar of Mountain View CA (US)
Jeffrey W. Anthis of San Jose CA (US)
Ryan Ley of Mountain View CA (US)
Alfredo Granados of San Antonio TX (US)
DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17736843 titled 'DRY TREATMENT FOR SURFACE LOSS REMOVAL IN MICRO-LED STRUCTURES
Simplified Explanation
- The patent application is about a method to correct defects in microLED structures caused by a mesa etch process. - The defects decrease the efficiency of the microLEDs. - The method involves a dry etch process that removes the surface layers of the microLED structures with defects. - The dry etch process incrementally removes a small outer layer to preserve the overall shape of the microLED structures. - The resulting surface is smooth and suitable for the application of a dielectric layer. - The dry etch process consists of two steps that are repeated: a first gas reacts with the surface to form a gallium compound layer, and a second gas selectively removes that layer. - The dry etch process can be plasma-based or reactive thermal etches.
Original Abstract Submitted
A mesa etch may form the geometry of microLED structures. However, the mesa etch may induce defects in the microLED structures that decreases the efficiency of the microLEDs. To correct these defects, a dry etch process may be performed that incrementally removes the surface layers of the microLED structures with the defects. The dry etch may be configured to incrementally remove a small outer layer, and thus may preserve the overall shape of the microLED structures while leaving a smooth surface for the application of a dielectric layer. The dry etch process may include two steps that are repeatedly performed. A first gas may react with the surface to form a gallium compound layer, and a second gas may then selectively remove that layer. The dry etch may include plasma-based etches or reactive thermal etches.
