US Patent Application 17729450. SENSE LINE AND CELL CONTACT simplified abstract
Contents
SENSE LINE AND CELL CONTACT
Organization Name
Inventor(s)
Kuo-Chen Wang of Hiroshima (JP)
Terrence B. Mcdaniel of Boise ID (US)
Russell A. Benson of Boise ID (US)
SENSE LINE AND CELL CONTACT - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17729450 Titled 'SENSE LINE AND CELL CONTACT'
Simplified Explanation
The abstract describes various methods, devices, and systems related to a sense line and cell contact in a semiconductor structure. One example device includes two source/drain regions separated by a channel, with a gate opposing the channel. A sense line material is connected to one of the source/drain regions through a cell contact, which is made from a combination of two types of polysilicon materials. Additionally, there is a storage node connected to the other source/drain region.
Original Abstract Submitted
Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region.
