US Patent Application 17724434. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Mahaveer Sathaiya Dhanyakumar of Hsinchu City (TW)
Cheng-Ting Chung of Hsinchu City (TW)
Chien-Hong Chen of Hsinchu County (TW)
Chung-Wei Wu of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17724434 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME'
Simplified Explanation
The abstract describes a method for fabricating a device using carbon nanotubes (CNTs). The process involves several steps, including depositing a dielectric layer on a substrate, growing a CNT on top of the dielectric layer, creating a dummy gate structure on the CNT, adding gate spacers on the sides of the dummy gate structure, forming source/drain epitaxy structures on either side of the dummy gate structure and in contact with the CNT, replacing the dummy gate structure with a metal gate structure, and finally, creating source/drain contacts on the source/drain epitaxy structures.
Original Abstract Submitted
A method includes forming a dielectric layer over a substrate; forming a carbon nanotube (CNT) over the dielectric layer; forming a dummy gate structure over the CNT; forming gate spacers on opposite sidewalls of the dummy gate structure; forming source/drain epitaxy structures on opposite sides of the dummy gate structure and in contact with opposite sidewalls of the CNT; replacing the dummy gate structure with a metal gate structure; and forming source/drain contacts over the source/drain epitaxy structures, respectively.
