US Patent Application 17705653. MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE simplified abstract
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Contents
MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Harry-Hak-Lay Chuang of Zhubei City (TW)
Fu-Chen Chang of New Taipei City (TW)
Tzu-Yu Chen of Kaohsiung City (TW)
Sheng-Hung Shih of Hsinchu City (TW)
MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17705653 Titled 'MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE'
Simplified Explanation
The abstract describes a ferroelectric memory device that consists of three main components: a bottom electrode, a ferroelectric structure, and a top electrode. The bottom electrode is made of molybdenum, a type of metal.
Original Abstract Submitted
The present disclosure relates to a ferroelectric memory device that includes a bottom electrode, a ferroelectric structure overlying the bottom electrode, and a top electrode overlying the ferroelectric structure where the bottom electrode includes molybdenum.
