ThinSiC Inc Patent Application Trends in 2024
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Contents
ThinSiC Inc Patent Filing Activity
ThinSiC Inc patent applications in 2024
Top 10 Technology Areas
- H01L29/1608 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS)
- Count: 3 patents
- Example: 20240006242. Wide Band Gap Semiconductor Process, Device, and Method (ThinSiC Inc.)
- C30B25/12 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,)
- Count: 2 patents
- Example: 20240266207. Cleaning Wide Bandgap Epitaxial Susceptors and Method Therefor (ThinSiC Inc)
- H01L21/7813 (with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies)
- Count: 2 patents
- Example: 20240006242. Wide Band Gap Semiconductor Process, Device, and Method (ThinSiC Inc.)
- H01L29/872 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS)
- Count: 2 patents
- Example: 20240006242. Wide Band Gap Semiconductor Process, Device, and Method (ThinSiC Inc.)
- H01L21/02378 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS)
- Count: 2 patents
- Example: 20240006242. Wide Band Gap Semiconductor Process, Device, and Method (ThinSiC Inc.)
- H01L29/6606 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS)
- Count: 2 patents
- Example: 20240006242. Wide Band Gap Semiconductor Process, Device, and Method (ThinSiC Inc.)
- C30B29/36 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,)
- Count: 2 patents
- Example: 20240006243. Semiconductor Exfoliation Method (ThinSIC Inc)
- H01L23/544 (Marks applied to semiconductor devices {or parts}, e.g. registration marks, {alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes)
- Count: 1 patents
- Example: 20240120284. Carbon Assisted Semiconductor Dicing And Method (ThinSiC Inc)
- H01L21/2636 (with high-energy radiation ()
- Count: 1 patents
- Example: 20240120284. Carbon Assisted Semiconductor Dicing And Method (ThinSiC Inc)
- H01L21/78 (with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies)
- Count: 1 patents
- Example: 20240120284. Carbon Assisted Semiconductor Dicing And Method (ThinSiC Inc)
Emerging Technology Areas
- H01L21/68771 (using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C30B25/14 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C30B25/10 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C23C16/46 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C23C16/4587 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C23C16/45504 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C23C16/4412 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- C23C16/325 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion)
- Count: 1 patents
- Example: 20240360589. Batch Mode Silicon Carbide Epitaxial Reactor (ThinSiC Inc.)
- H01L21/02271 ({deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition ()
- H01L21/02389 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS)
Top Inventors
- Tirunelveli Subramaniam Ravi of San Jose CA (US) (6 patents)
- Jinho Seo of Saratoga CA (US) (3 patents)
- Stephen Daniel Miller of San Jose CA (US) (2 patents)
- Bishnu Prasanna Gogoi of Scottsdale AZ (US) (2 patents)
- Ashraf Ahmed El dakrouri of Santa Clara CA (US) (1 patent)
- Ashraf Ahmed Eldakrouri of Santa Clara CA (US) (1 patent)
- Hoeseok Lee of San Jose CA (US) (1 patent)
- Jeffrey Scott Pietkiewicz of San Jose CA (US) (1 patent)
- Kelly Marie Moyers of Santa Clara CA (US) (1 patent)
- Bishnu Gogoi of Scottsdale AZ (US) (1 patent)
Patent Categories
Geographical Distribution of Inventors
Geographical Distribution of US Inventors
Categories:
- ThinSiC Inc
- Companies
- CPC H01L23/544
- CPC H01L21/2636
- CPC H01L21/78
- CPC H01L21/68757
- CPC B08B7/0035
- CPC B08B7/0042
- CPC B08B7/04
- CPC C30B25/12
- CPC H01L21/7813
- CPC H01L29/1608
- CPC H01L29/872
- CPC H01L21/02378
- CPC H01L21/02532
- CPC H01L29/6606
- CPC H01L21/0243
- CPC H01L21/02529
- CPC C30B33/02
- CPC C30B25/04
- CPC C30B25/20
- CPC C30B29/36
- CPC H01L29/4236
- CPC H01L29/0847
- CPC H01L29/66666
- CPC H01L29/7827
- CPC H01L21/02019
- CPC H01L21/02389
- CPC H01L21/02271
- CPC C23C16/325
- CPC C23C16/4412
- CPC C23C16/45504
- CPC C23C16/4587
- CPC C23C16/46
- CPC C30B25/10
- CPC C30B25/14
- CPC H01L21/68771
- Patent Trends by Company in 2024
