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Category:Yen-Ming Chen of Hsin-Chu County (TW)
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Pages in category "Yen-Ming Chen of Hsin-Chu County (TW)"
The following 17 pages are in this category, out of 17 total.
1
- 17838292. METHOD OF FORMING PACKAGE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18433217. INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524417. CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18581182. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240097010). CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186372). SELF-ALIGNED CONTACT AIR GAP FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194537). SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178271). INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract
U
- US Patent Application 18349448. INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS simplified abstract
- US Patent Application 18359254. METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract
- US Patent Application 18359542. EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446190. Semiconductor Device with Air-Spacer simplified abstract
- US Patent Application 18446593. MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE simplified abstract