Category:Hosadurga Shobha of Niskayuna NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Executive Summary

Hosadurga Shobha of Niskayuna NY (US) is an inventor who has filed 1 patents. Their primary areas of innovation include {by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general (1 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (1 patents), {formation of thin insulating films on the sidewalls or on top of conductors ( (1 patents), and they have worked with companies such as Adeia Semiconductor Solutions LLC (1 patents). Their most frequent collaborators include (1 collaborations), (1 collaborations), (1 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• H01L21/76879 ({by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general): 1 patents
• H01L2924/0002 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/76834 ({formation of thin insulating films on the sidewalls or on top of conductors (): 1 patents
• H01L21/76831 ({in via holes or trenches, e.g. non-conductive sidewall liners}): 1 patents
• H01L21/76855 ({After-treatment introducing at least one additional element into the layer}): 1 patents
• H01L21/02068 ({during, before or after processing of insulating layers}): 1 patents
• H01L23/528 ({Geometry or} layout of the interconnection structure {(): 1 patents
• H01L23/53238 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/76802 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
• H01L21/7684 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
• H01L21/76843 ({formed in openings in a dielectric}): 1 patents
• H01L21/76858 ({by diffusing alloying elements}): 1 patents
• H01L21/76865 ({Selective removal of parts of the layer (): 1 patents
• H01L21/76873 ({Thin films associated with contacts of capacitors}): 1 patents
• H01L21/76888 ({by deposition over sacrificial masking layer, e.g. lift-off (lift-off per se): 1 patents
• H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/02172 ({the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides (materials containing silicon): 1 patents
• H01L21/02244 ({the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers): 1 patents
• H01L21/76846 ({Layer combinations}): 1 patents
• H01L21/7685 ({the layer covering a conductive structure (): 1 patents
• H01L21/76856 ({by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner}): 1 patents
• H01L21/76849 ({the layer being positioned on top of the main fill metal}): 1 patents

Companies

List of Companies

• Adeia Semiconductor Solutions LLC: 1 patents

Collaborators

• Daniel C. Edelstein of White Plains NY (US) (1 collaborations)
• Son V. Nguyen of Schenectady NY (US) (1 collaborations)
• Takeshi Nogami of Schenectady NY (US) (1 collaborations)
• Deepika Priyadarshini of Guilderland NY (US) (1 collaborations)