US Patent Application 18448100. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Yu-Hao Chen of Hsinchu (TW)]]
[[Category:Hui Yu Lee of Hsinchu (TW)]]
[[Category:Jui-Feng Kuan of Hsinchu (TW)]]
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448100 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor structure with an optical component and a thermal control mechanism.
- The method involves surrounding the optical component with a first dielectric layer.
- The thermal control mechanism is formed adjacent to the optical component and partially surrounded by the first dielectric layer.
- The thermal control mechanism includes a first thermoelectric member with a certain conductivity type and a second thermoelectric member with the opposite conductivity type.
- A conductive structure is formed over and electrically connected to the thermal control mechanism.
- A second dielectric layer is formed over the first dielectric layer and surrounds the conductive structure.
Original Abstract Submitted
A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.