Category:H01L29/775
H01L29/775 – IPC Classification Breakdown
H01L29/775 is a specific classification code under the International Patent Classification (IPC) system, which categorizes patents and patent applications according to the different areas of technology they pertain to. This classification falls under the broader category of H01L which relates to semiconductor devices; electric solid state devices not otherwise provided for. Here is a detailed breakdown of the code H01L29/775:
- H01L: This symbolizes the section of the classification dedicated to semiconductor devices; electric solid state devices not otherwise provided for.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29/775: This represents the most specific classification, indicating semiconductor devices with insulated gate field-effect transistors.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
Applications of H01L29/775
The H01L29/775 classification typically encompasses patents related to the structure, manufacturing processes, and applications of insulated gate field-effect transistors (IGFETs), including:
- Design innovations in gate dielectrics, channel engineering, and source/drain configurations.
- Developments in semiconductor materials and doping techniques for performance enhancement.
- Advanced fabrication methods to improve transistor reliability, scalability, and power efficiency.
Relevance in Modern Technology
Transistors classified under H01L29/775 are crucial in modern electronic devices, playing a pivotal role in the miniaturization and performance improvement of integrated circuits used in:
- Computers and smartphones
- High-speed networking and communication devices
- Automotive electronics and sensors
- Renewable energy systems and power management
Category Links
Pages in category "H01L29/775"
The following 200 pages are in this category, out of 1,100 total.
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- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808566. COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17827779. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17846948. MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848406. SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850769. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING COMMON METAL GATES AND HAVING GATE DIELECTRICS WITH AN OPPOSITE POLARITY DIPOLE LAYER simplified abstract (Intel Corporation)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851979. INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17859242. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17886689. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886876. SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894097. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896523. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17897648. SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
- 17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17943602. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945275. STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17962235. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Tokyo Electron Limited)
- 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17986276. BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17994487. SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18054194. STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060056. LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062116. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18064260. PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract (International Business Machines Corporation)
- 18065860. STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract (International Business Machines Corporation)
- 18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation)
- 18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)
- 18067710. SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 18067968. STACKED TRANSISTORS WITH STEPPED CONTACTS simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)
- 18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18072564. FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS simplified abstract (Intel Corporation)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18081855. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18085768. CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18086303. PRODUCING STRESS IN NANOSHEET TRANSISTOR CHANNELS simplified abstract (International Business Machines Corporation)
- 18087879. METAL GATE CUT WITH HYBRID MATERIAL FILL simplified abstract (Intel Corporation)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18089877. INTEGRATED CIRCUIT STRUCTURES HAVING LOOKUP TABLE DECODERS FOR FPGAS simplified abstract (Intel Corporation)
- 18090048. GATE CUT, AND SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18090828. INTEGRATED CIRCUIT STRUCTURES HAVING ROUTING ACROSS LAYERS OF CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18091192. TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract (Intel Corporation)
- 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation)
- 18091209. TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (Intel Corporation)
- 18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation)
- 18091676. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN NUMBERS simplified abstract (Intel Corporation)
- 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
- 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation)
- 18096389. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18097274. SEMICONDUCTOR DEVICE WITH PROTECTIVE GATE STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18099732. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18100872. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18104927. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18106812. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18107658. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18113715. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18116209. Barrier Layers in Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18119037. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18121701. INTEGRATED CIRCUIT STRUCTURE WITH BACK-SIDE CONTACT SELECTIVITY simplified abstract (Intel Corporation)
- 18121720. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING TUNED UPPER NANOWIRES simplified abstract (Intel Corporation)
- 18121724. INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES WITH PYRAMIDAL CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18121869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18123613. BACKSIDE POWER ISLANDS FOR BACKSIDE POWER APPLICATIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18125411. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18125456. CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18126298. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18128417. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18130732. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18135530. 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18135598. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18138877. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18139985. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18146988. FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18147525. NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18148577. MIDDLE OF THE LINE ARCHITECTURE WITH SUBTRACTIVE SOURCE/DRAIN CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18150027. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150524. Transistor Source/Drain Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18150545. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152421. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152790. TRANSISTOR GATE STACK FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153646. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157448. STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157607. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158505. BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract (International Business Machines Corporation)
- 18159200. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18159625. MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163857. FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18163986. METAL GATE PATTERNING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18165639. NANOSHEET DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18165867. SEMICONDUCTOR DEVICE AND LOGIC DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167169. TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167718. MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18169628. SEMICONDUCTOR STRUCTURE WITH HIGH INTEGRATION DENSITY AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170104. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18170259. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18171508. Semiconductor Device and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18172595. 3D U-SHAPED NANOSHEET DEVICE simplified abstract (Tokyo Electron Limited)
- 18172703. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18172877. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18177171. BACKSIDE GATE VIA STRUCTURE USING SELF-ALIGNED SCHEME simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18177381. SEMICONDUCTOR DEVICES WITH IMPLANTED STI REGIONS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18177909. SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18177911. GATE SPACERS IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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