18104927. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsu Ming Hsiao of Hsinchu (TW)

Hsiu-Hao Tsao of Taichung (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18104927 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

The semiconductor device described in the patent application includes a semiconductor material over a substrate, with epitaxial source/drain regions at each end, dummy gate dielectric layers, and an interfacial dielectric layer.

  • The device features a unique configuration with epitaxial source/drain regions and dummy gate dielectric layers.
  • The interfacial dielectric layer enhances the performance and reliability of the device.
  • This design allows for improved control and efficiency in semiconductor operations.
  • The technology offers potential advancements in semiconductor manufacturing processes.
  • The device may lead to enhanced performance and functionality in electronic devices.

Potential Applications: - Semiconductor manufacturing - Electronic devices - Integrated circuits

Problems Solved: - Improved control and efficiency in semiconductor operations - Enhanced performance and reliability of electronic devices

Benefits: - Enhanced performance and functionality in electronic devices - Potential advancements in semiconductor manufacturing processes

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality. The market implications include potential advancements in semiconductor manufacturing and the development of more advanced electronic products.

Questions about the technology: 1. How does the configuration of epitaxial source/drain regions and dummy gate dielectric layers contribute to the device's performance? 2. What are the potential implications of this technology on the semiconductor industry?


Original Abstract Submitted

A semiconductor device, along with methods of forming such, are described. The device includes a semiconductor material disposed over a substrate, a first epitaxial source/drain region in contact with a first end of the semiconductor material, a second epitaxial source/drain region in contact with a second end opposite the first end of the semiconductor material, a first dummy gate dielectric layer in contact with the semiconductor material and the first epitaxial source/drain region, a second dummy gate dielectric layer in contact with the semiconductor material and the second epitaxial source/drain region, and an interfacial dielectric disposed between the first and second dummy gate dielectric layers.