Category:H01L29/78
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,354 total.
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- Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240159599). TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162094). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162347). INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162349). GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186179). Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186185). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186189). INTEGRATED CIRCUIT DEVICE WITH LOW THRESHOLD VOLTAGE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186320). RECESSED GATE FOR AN MV DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186326). SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186390). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186412). High Voltage Transistor Structure simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186414). FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186415). Semiconductor Device and Methods of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186417). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194559). THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194674). SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194675). SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194749). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194753). FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194762). METAL OXIDE INTERLAYER STRUCTURE FOR NFET AND PFET simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194764). MULTI-GATE DEVICES WITH MULTI-LAYER INNER SPACERS AND FABRICATION METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194766). SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194767). DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194784). SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194785). FINFET DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194787). TRANSISTORS HAVING NANOSTRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194788). NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222456). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222458). SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222507). SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240222508). FINFET Devices with Backside Power Rail and Backside Self-Aligned Via simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240223087). METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224538). BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249943). N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249944). REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249948). Selective Formation Of Titanium Silicide And Titanium Nitride By Hydrogen Gas Control simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249979). SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249981). INTEGRATED CIRCUIT STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250086). P-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250116). HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250121). Fill Structures With Air Gaps simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250122). Isolation Structures Of Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250124). SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250125). SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250139). FORMING METAL CONTACTS ON METAL GATES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250142). Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250150). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250151). AIR SPACERS FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250153). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250154). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250155). METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250170). SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250171). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250173). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250174). MECHANISMS FOR GROWING EPITAXY STRUCTURE OF FINFET DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251539). METHOD FOR FORMING DIFFERENT TYPES OF DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312786). Contact Structures With Deposited Silicide Layers simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312792). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312913). Vertical Transistors Occupying Reduced Chip Area and the Methods Forming the Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313052). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313068). INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313072). ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313091). SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313114). FIN FIELD-EFFECT TRANSISTOR DEVICE HAVING HYBRID WORK FUNCTION LAYER STACK simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240313115). SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315042). SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 6th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105516). ASYMMETRIC SOURCE/DRAIN EPITAXY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105517). SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105719). INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105725). CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105778). Multi-Gate Device And Method Of Fabrication Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105795). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105813). Tuning Threshold Voltage in Field-Effect Transistors simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105817). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105818). Fin Field-Effect Transistor Device and Method of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105848). SEMICONDUCTOR DEVICE STRUCTURE WITH HIGH CONTACT AREA simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105849). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105850). FINFET STRUCTURE WITH FIN TOP HARD MASK AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105851). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240107736). Gate Isolation Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112958). CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113112). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113164). FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113165). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113172). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113183). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113202). Low-K Gate Spacer and Methods for Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113205). SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113206). MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240121965). VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136183). METHOD OF BREAKING THROUGH ETCH STOP LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136191). FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136227). Barrier-Free Approach for Forming Contact Plugs simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136228). Ion Implantation For Nano-FET simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136397). HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136438). INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178069). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178132). VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178271). INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178303). STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178319). DIPOLES IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178321). Fin Field-Effect Transistor Device with Composite Liner for the Fin simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203987). SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204044). Confined Source/Drain Epitaxy Regions and Method Forming Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204045). SEMICONDUCTOR DEVICES WITH BACKSIDE POWER RAIL AND METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204069). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204084). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204104). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204105). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204106). Semiconductor Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240212762). SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213313). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213340). SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213344). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215254). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234420). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234421). Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234506). SEMICONDUCTOR DEVICE WITH DOPED STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234526). SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234527). INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234534). METHODS OF FORMING FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234548). METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN STRUCTURE HAVING MODIFIED SHAPE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240234549). SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240242750). FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243129). EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVEMENT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243189). ISOLATION STRUCTURES FOR TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240243190). METAL GATE STRUCTURES AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258100). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258237). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258311). SEMICONDUCTOR DEVICE HAVING NANOSHEETS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258312). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258319). SEMICONDUCTOR DEVICE WITH IMPROVED DEVICE PERFORMANCE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258373). TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258390). SEMICONDUCTOR DEVICE, FINFET DEVICE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240258429). MERGED SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266167). EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266223). METHOD FOR FORMING LONG CHANNEL BACK-SIDE POWER RAIL DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266397). Semiconductor Devices Having Funnel-Shaped Gate Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266398). Source/Drain Device and Method of Forming Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266412). CONTACT STRUCTURE WITH ARCHED TOP SURFACE AND FABRICATION METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266415). Gate Dielectric for Gate Leakage Reduction simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266439). SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282639). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282640). ASYMMETRIC EPITAXY REGIONS FOR LANDING CONTACT PLUG simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282816). NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282820). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282840). SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282859). Gate Contact And Via Structures In Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284679). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290652). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290659). SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290712). INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290836). Gate Structures For Semiconductor Devices simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290850). SEMICONDUCTOR STRUCTURE WITH BACKSIDE SELF-ALIGNED CONTACT AND METHOD FOR FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290852). Source/Drain Contacts and Methods of Forming Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290863). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290865). CFET WITH VIA FUSE STRUCTURE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290867). FinFET Device and Method simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290869). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290870). METHODS FOR FORMING MULTI-GATE TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290886). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240290887). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240292591). MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297082). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297228). SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297235). AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297236). METHODS OF REDUCING CAPACITANCE IN FIELD-EFFECT TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297251). MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297252). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297253). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297254). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304620). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304628). METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304685). TRANSISTOR CONTACTS AND METHODS OF FORMING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304689). SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304721). LATERALLY DIFFUSED MOSFET AND METHOD OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304724). METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304725). FinFET Structures and Methods of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304730). TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240306360). SEMICONDUCTOR DEVICE WITH GATE RECESS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321746). BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321880). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321881). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321890). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240321966). DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION simplified abstract