18499153. METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH (TEXAS INSTRUMENTS INCORPORATED)
METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Thomas Moutinho of Gorham ME US
Tatsuya Tominari of Plano TX US
Thanas Budri of Portland ME US
METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH
This abstract first appeared for US patent application 18499153 titled 'METHOD TO SUPPRESS BASE POLY LINKUP OVERGROWTH INTO THE EMITTER CAVITY DURING SILICON GERMANIUM SELECTIVE EPITAXY GROWTH
Original Abstract Submitted
A semiconductor device includes a heterojunction bipolar transistor (HBT) having a collector, a base, and an emitter. The base includes a monocrystalline base layer, including silicon-germanium, on the collector, and an extrinsic base layer, including polycrystalline silicon, extending partway over the monocrystalline base layer. The base further includes a base link, including polycrystalline silicon-germanium, connecting the monocrystalline base layer to the extrinsic base layer. An emitter spacer, of dielectric material, laterally separates the emitter from the extrinsic base layer. The HBT has a spacer-extrinsic base vertical offset between a bottom of the emitter spacer and a bottom surface of the extrinsic base layer adjacent to the emitter spacer. The emitter spacer has a bottom width at a bottom of the emitter spacer. A sum of the spacer-extrinsic base vertical offset and the bottom width of the emitter spacer is greater than the thickness of the monocrystalline base layer.
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