18498097. FORKSHEET TRANSISTOR WITH ADVANCED CELL HEIGHT SCALING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
FORKSHEET TRANSISTOR WITH ADVANCED CELL HEIGHT SCALING
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruilong Xie of Niskayuna NY US
Kisik Choi of Watervliet NY US
Tenko Yamashita of Schenectady NY US
FORKSHEET TRANSISTOR WITH ADVANCED CELL HEIGHT SCALING
This abstract first appeared for US patent application 18498097 titled 'FORKSHEET TRANSISTOR WITH ADVANCED CELL HEIGHT SCALING
Original Abstract Submitted
Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a dielectric bar having a left sidewall and a right sidewall; a first nanosheet transistor having a first set of channel nanosheets in direct contact with the left sidewall of the dielectric bar; and a second nanosheet transistor having a second set of channel nanosheets in direct contact with the right sidewall of the dielectric bar, where a first portion of the dielectric bar between the first and the second set of channel nanosheets has a first height; a second portion of the dielectric bar between a first source/drain region of the first nanosheet transistor and a second source/drain region of the second nanosheet transistor has a second height; and the first height is higher than the second height. A method of forming the same is also provided.
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