SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kyung-Eun Byun of Suwon-si KR

Baekwon Park of Suwon-si KR

Minsu Seol of Suwon-si KR

Sungil Park of Hwaseong-si KR

Jaehyun Park of Hwaseong-si KR

Min seok Yoo of Suwon-si KR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 20250142896 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

a semiconductor device includes a metal nitride layer, a channel provided in the metal nitride layer and including a two-dimensional (2d) semiconductor material, a source electrode provided on one side of the channel, a drain electrode provided on another side of the channel, a gate insulating layer provided in the channel, and a gate electrode provided on the gate insulating layer.