Samsung electronics co., ltd. (20250142896). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jaehyun Park of Hwaseong-si KR
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
This abstract first appeared for US patent application 20250142896 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Original Abstract Submitted
a semiconductor device includes a metal nitride layer, a channel provided in the metal nitride layer and including a two-dimensional (2d) semiconductor material, a source electrode provided on one side of the channel, a drain electrode provided on another side of the channel, a gate insulating layer provided in the channel, and a gate electrode provided on the gate insulating layer.