Intel corporation (20250142870). FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

Organization Name

intel corporation

Inventor(s)

Cory Bomberger of Portland OR US

Anand S. Murthy of Portland OR US

Tahir Ghani of Portland OR US

Anupama Bowonder of Portland OR US

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

This abstract first appeared for US patent application 20250142870 titled 'FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

Original Abstract Submitted

fin smoothing, and integrated circuit structures resulting therefrom, are described. for example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having substantially vertical sidewalls. the semiconductor fin further includes a sub-fin portion within an opening in the isolation structure, the sub-fin portion having a different semiconductor material than the protruding fin portion. the sub-fin portion has a width greater than or less than a width of the protruding portion where the sub-fin portion meets the protruding portion. a gate stack is over and conformal with the protruding fin portion of the semiconductor fin. a first source or drain region at a first side of the gate stack, and a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.