Intel corporation (20250140543). Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
Organization Name
Inventor(s)
Arnab Sen Gupta of Hillsboro OR US
I-Cheng Tung of Hillsboro OR US
Jin Wang of Castro Valley CA US
Matthew Metz of Portland OR US
Eric Mattson of Portland OR US
Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
This abstract first appeared for US patent application 20250140543 titled 'Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
Original Abstract Submitted
the present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power dc power source and controller that produces a pulsed output. in an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power dc power source and controller, and alternatively, a high-power dc power source and controller that replaces the standard power source. in addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. in an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.
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