Category:Matthew Metz of Portland OR US
Matthew Metz
Matthew Metz from Portland OR US has applied for patents in technology areas such as H01L29/49, H01L21/02, H01L29/06 with intel corporation.
Patents
Pages in category "Matthew Metz of Portland OR US"
The following 9 pages are in this category, out of 9 total.
1
- 18375055. TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME (INTEL CORPORATION)
- 18375060. METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE (INTEL CORPORATION)
- 18499259. Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films (Intel Corporation)
- 19001219. RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER (Intel Corporation)
I
- Intel corporation (20250113540). TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME
- Intel corporation (20250113572). METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIVE METALLIZATION TO FORM A SOURCE OR DRAIN STRUCTURE
- Intel corporation (20250133822). RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER
- Intel corporation (20250140543). Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
