18381706. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu TW
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18381706 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A semiconductor device includes a substrate, an active structure, a first dielectric layer and a second dielectric layer. The active structure is formed on the substrate and includes an active channel sheet, wherein the active channel sheet has a first lateral surface. The first dielectric layer is formed above the active structure and has a recess, wherein the recess is recessed with respect to the first lateral surface of the active channel sheet. The second dielectric layer is formed within the recess and has a dielectric constant, wherein the dielectric constant is less than 3.9.