Jump to content

Samsung electronics co., ltd. (20240258239). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

From WikiPatents
Revision as of 03:49, 24 April 2025 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

SANGBONG Lee of Suwon-si KR

Seowoo Nam of Suwon-si KR

SUNGHO Seo of Suwon-si KR

SEOKMYEONG Kang of Suwon-si KR

KyuHoon Choi of Suwon-si KR

SEUNGSEOK Ha of Suwon-si KR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

This abstract first appeared for US patent application 20240258239 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Original Abstract Submitted

a semiconductor device includes: a first interlayer insulating layer disposed on a substrate; a first conductive line disposed in the first interlayer insulating layer and having a protrusion protruding above an upper side of the first interlayer insulating layer; an etch stop layer disposed on the first interlayer insulating layer and the first conductive line; and a via passing through the etch stop layer and contacting the first conductive line, wherein the etch stop layer includes a first etch stop layer having a curved shape in a cross-sectional view and a second etch stop layer disposed on the first etch stop layer and having a thickness variation.

Cookies help us deliver our services. By using our services, you agree to our use of cookies.