18954980. SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE
Organization Name
Inventor(s)
Myunghoon Jung of Clifton Park NY US
Seungchan Yun of Waterford NY US
Kang-ill Seo of Springfield VA US
SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE
This abstract first appeared for US patent application 18954980 titled 'SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE
Original Abstract Submitted
Provided is a semiconductor device which may include: a channel structure; a gate structure on the channel structure; and a gate contact structure on the gate structure, the gate contact structure configured to receive a gate input signal, wherein the gate contact structure is a portion of the gate structure itself, and no connection surface, interface or boundary is formed between the gate contact structure and the gate structure.
(Ad) Transform your business with AI in minutes, not months
✓
Custom AI strategy tailored to your specific industry needs
✓
Step-by-step implementation with measurable ROI
✓
5-minute setup that requires zero technical skills
Trusted by 1,000+ companies worldwide
