Category:Kang-ill Seo of Springfield VA US
Kang-ill Seo
Kang-ill Seo from Springfield VA US has applied for patents in technology areas such as H01L27/06, H01L21/8238, H01L23/528 with samsung electronics co., ltd..
Patents
Pages in category "Kang-ill Seo of Springfield VA US"
The following 14 pages are in this category, out of 14 total.
1
- 18433145. SEMICONDUCTOR DEVICE INCLUDING METAL LINES HAVING DIFFERENT METAL PITCHES (SAMSUNG ELECTRONICS CO., LTD.)
- 18586112. 3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES, SOURCE/DRAIN REGIONS, AND GATE STRUCTURES AT DIFFERENT LEVELS (SAMSUNG ELECTRONICS CO., LTD.)
- 18617125. SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT STRUCTURES ON SOURCE/DRAIN REGION (SAMSUNG ELECTRONICS CO., LTD.)
- 18618469. BRIDGE-FREE AND CMP-FRIENDLY INTERCONNECT STRUCTURE IN SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18756482. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCTURE AND ETCH STOP LAYER (Samsung Electronics Co., Ltd.)
- 18954980. SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE (SAMSUNG ELECTRONICS CO., LTD.)
S
- Samsung electronics co., ltd. (20250022797). INTERCONNECT STRUCTURE INCLUDING METAL LINE AND TOP VIA FORMED THROUGH DIFFERENT PROCESSES
- Samsung electronics co., ltd. (20250098324). 3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES, SOURCE/DRAIN REGIONS, AND GATE STRUCTURES AT DIFFERENT LEVELS
- Samsung electronics co., ltd. (20250118676). SEMICONDUCTOR DEVICE INCLUDING METAL LINES HAVING DIFFERENT METAL PITCHES
- Samsung electronics co., ltd. (20250120183). SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM GATE STRUCTURE
- Samsung electronics co., ltd. (20250125253). BRIDGE-FREE AND CMP-FRIENDLY INTERCONNECT STRUCTURE IN SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250142871). SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT STRUCTURES ON SOURCE/DRAIN REGION
- Samsung electronics co., ltd. (20250151362). SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCTURE AND ETCH STOP LAYER
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