Qualcomm incorporated (20250118645). INTEGRATED CIRCUIT (IC) PACKAGES EMPLOYING A CAPACITOR-EMBEDDED, REDISTRIBUTION LAYER (RDL) SUBSTRATE FOR INTERFACING AN IC CHIP(S) TO A PACKAGE SUBSTRATE, AND RELATED METHODS
INTEGRATED CIRCUIT (IC) PACKAGES EMPLOYING A CAPACITOR-EMBEDDED, REDISTRIBUTION LAYER (RDL) SUBSTRATE FOR INTERFACING AN IC CHIP(S) TO A PACKAGE SUBSTRATE, AND RELATED METHODS
Organization Name
Inventor(s)
Jihong Choi of San Diego CA US
Giridhar Nallapati of San Diego CA US
William Stone of San Diego CA US
Jonghae Kim of San Diego CA US
Periannan Chidambaram of San Diego CA US
INTEGRATED CIRCUIT (IC) PACKAGES EMPLOYING A CAPACITOR-EMBEDDED, REDISTRIBUTION LAYER (RDL) SUBSTRATE FOR INTERFACING AN IC CHIP(S) TO A PACKAGE SUBSTRATE, AND RELATED METHODS
This abstract first appeared for US patent application 20250118645 titled 'INTEGRATED CIRCUIT (IC) PACKAGES EMPLOYING A CAPACITOR-EMBEDDED, REDISTRIBUTION LAYER (RDL) SUBSTRATE FOR INTERFACING AN IC CHIP(S) TO A PACKAGE SUBSTRATE, AND RELATED METHODS
Original Abstract Submitted
integrated circuit (ic) packages employing a capacitor-embedded, redistribution layer (rdl) substrate and related fabrication methods. the embedded capacitor can be coupled to a power distribution network (pdn) to provide decoupling capacitance to reduce current-resistance (ir) drop. the rdl substrate is disposed between the ic chip(s) and the package substrate to minimize distance between the embedded capacitor(s) and the ic chip(s) to reduce the parasitic inductance in the pdn, thus reducing pdn noise. with the rdl substrate disposed between the package substrate and the ic chip(s), the rdl substrate needs to support through-interconnections between the package substrate and the ic chip(s). in this regard, the rdl substrate includes an outer rdl layer adjacent to the ic chip(s) to support small pitch metal interconnects as well as provide fan-out capability. this provides enhanced connectivity compatibility with higher-density die interconnect ic chips while also supporting a closer located embedded capacitor in the pdn.
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