Samsung electronics co., ltd. (20250107180). STACKED INTEGRATED CIRCUIT DEVICE

STACKED INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kyunghee Cho of Suwon-si KR

Byungho Moon of Suwon-si KR

Donghoon Hwang of Suwon-si KR

STACKED INTEGRATED CIRCUIT DEVICE

This abstract first appeared for US patent application 20250107180 titled 'STACKED INTEGRATED CIRCUIT DEVICE

Original Abstract Submitted

provided is an integrated circuit device including a base substrate layer, a sheet separation wall extending on the base substrate layer in a first horizontal direction, a pair of nanosheet stacked structures including the sheet separation wall therebetween and apart from each other in a second horizontal direction, the second horizontal direction different from the first horizontal direction, the pair of nanosheet stacked structures each including a plurality of nanosheets, a plurality of cladding patterns between a first end of each of the plurality of nanosheets included in each of the pair of nanosheet stacked structures and the sheet separation wall, and a pair of gate electrodes extending on the pair of nanosheet stacked structures in the second horizontal direction.