Samsung electronics co., ltd. (20250107180). STACKED INTEGRATED CIRCUIT DEVICE
STACKED INTEGRATED CIRCUIT DEVICE
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STACKED INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 20250107180 titled 'STACKED INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
provided is an integrated circuit device including a base substrate layer, a sheet separation wall extending on the base substrate layer in a first horizontal direction, a pair of nanosheet stacked structures including the sheet separation wall therebetween and apart from each other in a second horizontal direction, the second horizontal direction different from the first horizontal direction, the pair of nanosheet stacked structures each including a plurality of nanosheets, a plurality of cladding patterns between a first end of each of the plurality of nanosheets included in each of the pair of nanosheet stacked structures and the sheet separation wall, and a pair of gate electrodes extending on the pair of nanosheet stacked structures in the second horizontal direction.
