Jump to content

Samsung electronics co., ltd. (20250081585). GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

From WikiPatents
Revision as of 02:16, 17 March 2025 by Unknown user (talk) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jaejin Lee of Goyang-si (KR)

Youngjun Kim of Seoul (KR)

Hunyoung Bark of Suwon-si (KR)

Taekyung Yoon of Hwaseong-si (KR)

Eunok Lee of Suwon-si (KR)

GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

This abstract first appeared for US patent application 20250081585 titled 'GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

Original Abstract Submitted

a gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. the gate structure is buried in an upper portion of a substrate. the gate barrier pattern has a flat upper surface and an uneven lower surface.

Cookies help us deliver our services. By using our services, you agree to our use of cookies.