Samsung electronics co., ltd. (20250081585). GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Organization Name
Inventor(s)
Hunyoung Bark of Suwon-si (KR)
Taekyung Yoon of Hwaseong-si (KR)
GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
This abstract first appeared for US patent application 20250081585 titled 'GATE STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Original Abstract Submitted
a gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. the gate structure is buried in an upper portion of a substrate. the gate barrier pattern has a flat upper surface and an uneven lower surface.